近4年内,已经在Applied Physics Letters、Journal of Applied Physics、IEEE、Optics Express、Optics Letters等领域内顶尖SCI 期刊发表科研论文40多篇,其中以第一作者/通讯作者发表文章23篇(包括综述文章1篇),总影响因子已达130,总引用次数已达400次,单篇最高引用次数达40次,H-因子为10;受邀以第一作者身份分别为2部学术专著(Handbook of GaN Semiconductor Materials and Devices, Handbook for Solid-State Lighting and LEDs,均由英国Taylor & Francis Group于2017年出版)各自撰写章节1章;申请国内外专利技术15 项(其中4项专利已经分别获得美国、新加坡、土耳其授权)。提出了具有高度创新的器件物理,并且从理论和实验层面证实了诸多新型LED器件结构,针对氮化物LED目前面临的电子逃逸、空穴注入效率低、电流拥挤、p-型欧姆接触、俄歇复合、量子阱区量子限制斯塔克效应等问题都提出了解决方案,并且研究工作先后9次分别被英国《今日半导体-Semiconductor Today》杂志、美国Applied Physics Letters、德国Wiley杂志社做专门报道,或被列为主题文章(feature article)、封面文章(Front Cover)。目前承担国际级、省部级课题及人才项目5项,作为骨干人员参与科技部重点研发计划子课题1项。
目前担任Optics Letters、Optics Material Express、Optics Express、IEEE/OSA Journal of Display Technology、Journal of Applied Physics、Applied Physics Letters、中国半导体学报等期刊的特邀审稿专家。
代表性成果:
1. Z. -H. Zhang*, Y. Zhang, W. G. Bi, C. Geng, S. Xu, H. V. Demir, and X. W. Sun, “A charge inverter for III-nitride light-emitting diodes”, Appl. Phys. Lett., 2016, 108(13), 133502 (Highlighted by semiconductor-today in April of 2016).
2. Z. -H. Zhang*, Y. Zhang, W. G. Bi, C. Geng, S. Xu, H. V. Demir, and X. W. Sun, “On the hole accelerator for III-nitride light-emitting diodes”, Appl. Phys. Lett., 2016, 108(15), 151105.
3. Z. -H. Zhang*, Y. Zhang, W. G. Bi, H. V. Demir, and X. W. Sun, “On the internal quantum efficiency for InGaN/GaN light-emitting diodes grown on insulating substrates”, Phys. Status Solidi (A), 2016, 23(12), 3078 (Feature article, Front cover).
4. Z.-H. Zhang*, Y. Zhang, H. J. Li, S. Xu, C. Geng and W. G. Bi, “On the importance of the polarity for GaN/InGaN last quantum barriers in III-nitride based light-emitting diodes”, IEEE Photon. J., 2016, 8(6),8200307.
5. Y. P. Zhang#, Z. –H. Zhang# (#共同第一作者/authors of equal contribution), S. T. Tan, B. B. Zhu, S. P. Lu, N. Hasanov, X. Kang, X. W. Sun,and H. V. Demir,“Investigation of p-type depletion doping of InGaN/GaN-based light-emitting diodes”, Appl. Phys. Lett., 110, 033506 ( 2017).
6. Z. –H. Zhang*,Y. Zhang,W. G. Bi, H. V. Demir, and X. W. Sun, “Internal quantum efficiency for III-nitride based blue light-emitting diodes”, Book chapter for Handbook of GaN Semiconductor Materials and Devices (in press), Taylor & Francis Group. Editor: Wen Gang Bi.
7. Z. –H. Zhang*, Y. Zhang, X. W. Sun and W. G. Bi, “A hole accelerator for III-nitride light-emitting diodes”, Book chapter for Handbook for Solid-State Lighting and LEDs (in press), Taylor & Francis Group, Editor: Zhe Chuan Feng.
8. ZHANG Zi-Hui (张紫辉), TAN Swee Tiam, SUN Xiaowei, Hilmi Volkan DEMIR, “A Light-emitting device”, 11201408080U (新加坡专利,授权日期:2015年10月2日).
9. ZHANG Zi-Hui (张紫辉), TAN Swee Tiam, SUN Xiaowei, Hilmi Volkan DEMIR, “Light-emitting device”, US 9,362,445 B2 (美国专利,授权日期2016年6月7日).
10. ZHANG Zi-Hui (张紫辉), TAN Swee Tiam, SUN Xiaowei, Hilmi Volkan DEMIR, “Light-emitting device”, “A Light-emitting device”, TR2014 15497 B (土耳其专利,授权日期 2016年10月21日).
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